STGW20NC60VD 数据手册
其他文档
STGW20NC60VD 14 pages
技术规格
- RoHS: true
- Type: -
- Category: Triode/MOS Tube/Transistor/IGBTs
- Datasheet: STMicroelectronics STGW20NC60VD
- Operating Temperature: -55°C~+150°C@(Tj)
- Collector Current (Ic): 60A
- Power Dissipation (Pd): 200W
- Input Capacitance (Cies@Vce): -
- Turn?on Switching Loss (Eon): 0.22mJ
- Pulsed Collector Current (Icm): 150A
- Turn?off Switching Loss (Eoff): 0.33mJ
- Diode Reverse Recovery Time (Trr): 44ns
- Collector-Emitter Breakdown Voltage (Vces): 600V
- Gate-Emitter Threshold Voltage (Vge(th)@Ic): -
- Package: TO-247
- Manufacturer: STMicroelectronics
- Series: PowerMESH™
- Packaging: Tube
- Part Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 60A
- Current - Collector Pulsed (Icm): 150A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
- Power - Max: 200W
- Switching Energy: 220µJ (on), 330µJ (off)
- Input Type: Standard
- Gate Charge: 100nC
- Td (on/off) @ 25°C: 31ns/100ns
- Test Condition: 390V, 20A, 3.3Ohm, 15V
- Reverse Recovery Time (trr): 44ns
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
- Base Part Number: STGW20
- detail: IGBT 600V 60A 200W Through Hole TO-247-3